Effects of Layer Stacking on the Combination Raman modes in Graphene

Details Effects of Layer Stacking on the Combination Raman modes in Graphene Effects of Layer Stacking on the Combination Raman modes in Graphene

2011-06-06

arxiv.org/abs/1106.1153v1

ACS Nano, 5(3), 1594, 2011

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 Pages, 4 Figures

Scientific paper

10.1021/nn1031017

We have observed new combination modes in the range from 1650 - 2300 cm-1 in single-(SLG), bi-, few-layer and incommensurate bilayer graphene (IBLG) on silicon dioxide substrates. The M band at ~1750 cm-1 is suppressed for both SLG and IBLG. A peak at ~1860 cm-1 (iTALO-) is observed due to a combination of the iTA and LO phonons. The intensity of this peak decreases with increasing number of layers and this peak is absent in bulk graphite. Two previously unidentified modes at ~1880 cm-1 (iTALO+) and ~2220 cm-1 (iTOTA) in SLG are tentatively assigned as combination modes around the K point of the graphene Brillouin zone. The peak frequencies of the iTALO+ (iTOTA) modes are observed to increase (decrease) linearly with increasing graphene layers.

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