Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors

Details Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors

2009-09-16

arxiv.org/abs/0909.3124v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We present a technique to calculate the spin relaxation of hot electrons during their energy thermalization in the Gamma-valley of zinc-blende semiconductors. The results of this model match recent experimental data and they can be used to check the applicability of spin related boundary conditions across a semiconductor/ferromagnet junction in reverse bias conditions (spin injection).

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