Ion induced segregation in gold nanostructured thin films on silicon

Details Ion induced segregation in gold nanostructured thin films on silicon Ion induced segregation in gold nanostructured thin films on silicon

2008-08-04

arxiv.org/abs/0808.0448v1

Physics

Condensed Matter

Materials Science

10 pages, 2 figures

Scientific paper

10.1016/j.nimb.2008.08.012

We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.

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