The self-compression of injected electron-hole plasma in silicon

Details The self-compression of injected electron-hole plasma in silicon The self-compression of injected electron-hole plasma in silicon

2008-01-20

arxiv.org/abs/0801.3057v1

Phys. Stat. Sol. (b) 232, # 2, 364-379 (2002)

Physics

Condensed Matter

Other Condensed Matter

32 pages, 7 figures

Scientific paper

A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to 0.003, appears to be unexpectedly high. The spectral position of the luminescence line indicates, that a weak overheating of the diode by the diode current results in an anomalously strong reduction of the semiconductor energy gap inside the electron-hole plasma. A unique threshold optical hysteresis is observed in the luminescence intensity with changing diode current. These results are explained by condensation of injected electron-hole plasma into a dense state. A reduction of the semiconductor energy gap due to generation of phonons by the plasma is discussed as a reason of the plasma condensation. The plasma condensation is identified as the plasma self-compression.

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