Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

Details Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

2003-08-19

arxiv.org/abs/cond-mat/0308386v3

Phys. Rev. B 69, 085209 (2004).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures, submitted to Rapid Communications

Scientific paper

10.1103/PhysRevB.69.085209

We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as $\sim 10^{5} {\rm A cm}^{-2}$.

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