Exciton-Population Inversion and Terahertz Gain in Resonantly Excited Semiconductors

Details Exciton-Population Inversion and Terahertz Gain in Resonantly Excited Semiconductors Exciton-Population Inversion and Terahertz Gain in Resonantly Excited Semiconductors

2004-03-26

arxiv.org/abs/cond-mat/0403653v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.93.076402

The build-up of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation at the $2s$-exciton resonance, it is shown that polarization with a strict $s$-type radial symmetry can be efficiently converted into an incoherent $p$-type population. As a consequence, inversion between the $2p$ and $1s$ exciton states can be obtained leading to the appearance of significant terahertz gain.

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