Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires

Details Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires Quantum interference in nanometric devices: ballistic transport across arrays of T-shaped quantum wires

1997-08-04

arxiv.org/abs/cond-mat/9708020v1

Physics

Condensed Matter

To appear in the 09/15/97 issue of Appl. Phys. Lett. (9 pages in REVTEX + 2 figures in postscript)

Scientific paper

10.1063/1.119954

We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering matrix approach and the Landauer-B\"uttiker theory, we calculate the conductance for ballistic transport in the parent QWs and across the wire region as a function of the injection energy. We show that different conductance profiles can be selected by tailoring the widths of the QWs and/or combining more wires on the scale of the Fermi wavelength. Finally, we discuss the possibility of obtaining spin-dependent conductance of ballistic holes in the same structures.

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