Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Details Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

2002-05-10

arxiv.org/abs/cond-mat/0205226v2

Phys. Rev. Lett. 89, 276401 (2002)

Physics

Condensed Matter

Strongly Correlated Electrons

revtex4; 4+ pages, 5 figures

Scientific paper

10.1103/PhysRevLett.89.276401

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.

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