Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

Details Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

2011-08-24

arxiv.org/abs/1108.4881v2

J. Appl. Phys. 111, 043711 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

23 pages, 9 figures; added Section II(E) and associated figures, and made other minor typographical corrections

Scientific paper

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak is computed, and its use for devices is discussed. The influence of both rotational alignment of the graphene electrodes and structural perfection of the graphene is discussed.

Affiliated with

Also associated with

No associations

Rating

Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-377868