Tuning impurity states in bilayer graphene

Details Tuning impurity states in bilayer graphene Tuning impurity states in bilayer graphene

2007-11-07

arxiv.org/abs/0711.1168v1

Physics

Condensed Matter

Strongly Correlated Electrons

7 pages, 9 figures, sumbitted to PRB

Scientific paper

10.1103/PhysRevB.77.115114

We study the impurity states in bilayer graphene in the unitary limit using Green's function method. Unlike in single layer graphene, the presence of impurities at two non-equivalent sites in bilayer graphene produce different impurity states which is understood as the change in the band structure due to interlayer hopping of electrons. The impurity states can also be tuned by changing the band structure of bilayer grahene through external electric field bias.

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