Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces

Details Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces

2008-02-15

arxiv.org/abs/0802.2153v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.2904629

Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.

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