Thermal rectification effects of multiple semiconductor quantum dot junctions

Details Thermal rectification effects of multiple semiconductor quantum dot junctions Thermal rectification effects of multiple semiconductor quantum dot junctions

2010-04-18

arxiv.org/abs/1004.2989v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 8figures

Scientific paper

Based on the multiple energy level Anderson model, this study theoretically examines the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by using the Keldysh Green's function technique. Results show that the thermal rectification effect can be observed in a multiple QD junction system, whereas the tunneling rate, size fluctuation, and location distribution of QD significantly influence the rectification efficiency.

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