Self-doping effects in epitaxially grown graphene

Details Self-doping effects in epitaxially grown graphene Self-doping effects in epitaxially grown graphene

2009-01-13

arxiv.org/abs/0901.1901v1

Applied Physics Letters 93, 243119 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Published in Applied Physics Letters 93, 243119 (2008)

Scientific paper

10.1063/1.3028015

Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

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