Spin injection and electric field effect in degenerate semiconductors

Details Spin injection and electric field effect in degenerate semiconductors Spin injection and electric field effect in degenerate semiconductors

2003-06-21

arxiv.org/abs/cond-mat/0306544v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Version accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.69.165305

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.

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