The Single-Electron-Box and the Helicity Modulus of an inverse square XY-Model

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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4 pages revtex, 1 eps figure

Scientific paper

10.1103/PhysRevLett.78.3737

We calculate the average number of electrons on a metallic single-electron-box as a function of the gate voltage for arbitrary values of the tunneling conductance. In the vicinity of the plateaus the problem is equivalent to calculating the helicity modulus of a classical inverse square XY-model in one dimension. By a combination of perturbation theory, a two-loop renormalization group calculation and a Monte-Carlo simulation in the intermediate regime we provide a complete description of the smearing of the Coulomb staircase at zero temperature with increasing conductance.

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