Metastability from Photoluminescence of n-type GaN

Details Metastability from Photoluminescence of n-type GaN Metastability from Photoluminescence of n-type GaN

2004-11-09

arxiv.org/abs/cond-mat/0411224v2

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.

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