Schwoebel barriers on Si(111) steps and kinks

Details Schwoebel barriers on Si(111) steps and kinks Schwoebel barriers on Si(111) steps and kinks

1996-03-05

arxiv.org/abs/cond-mat/9603035v1

Physics

Condensed Matter

Manuscript in revtex twocolumn format (7pgs - which includes 14 postscript files). Submitted to the The Journal of Vacuum Scie

Scientific paper

10.1116/1.588839

Motivated by our previous work using the Stillinger-Weber potential, which shows that the [$\overline{2}11$] step on 1$\times$1 reconstructed Si(111) has a Schwoebel barrier of 0.61$\pm$0.07 eV, we calculate here the same barrier corresponding to two types of kinks on this step - one with rebonding between upper and lower terrace atoms (type B) and the other without (type A). From the binding energy of an adatom, without additional relaxation of other atoms, we find that the Schwoebel barrier must be less than 0.39 eV (0.62 eV) for the kink of type A (type B). From the true adatom binding energy we determine the Schwoebel barrier to be 0.15$\pm$0.07eV (0.50$\pm$0.07 eV). The reduction of the Schwoebel barrier due to the presence of rebonding along the step edge or kink site is argued to be a robust feature. However, as the true binding energy plots show discontinuities due to significant movement of atoms at the kink site, we speculate on the possibility of multi-atom processes having smaller Schwoebel barriers.

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