Spatially resolved spectroscopy of monolayer graphene on SiO2

Details Spatially resolved spectroscopy of monolayer graphene on SiO2 Spatially resolved spectroscopy of monolayer graphene on SiO2

2008-12-05

arxiv.org/abs/0812.1073v2

Phys. Rev. B 79, 205411 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 7 figures, extended version

Scientific paper

10.1103/PhysRevB.79.205411

We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate.

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