Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation

Details Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation

2005-08-08

arxiv.org/abs/cond-mat/0508200v2

Physics

Condensed Matter

Materials Science

20 pages, 4 figures

Scientific paper

10.1103/PhysRevB.73.134422

Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni nanowires contacted with Ni, Au and Cu. The results of this study show that while the giant magnetoresistance and corresponding thermopower demonstrates the role of spin-flip scattering, the observed anisotropic magnetothermopower indicates interband s-d relaxation mechanisms.

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