Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems

Details Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems

2002-02-25

arxiv.org/abs/cond-mat/0202437v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, no figures, Topical Review for J. Phys. Cond. Matter (in press)

Scientific paper

10.1088/0953-8984/14/12/202

Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin--orbit interaction due to both the bulk inversion asymmetry and the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III--V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.

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