Theory of Optical Orientation in n-Type Semiconductors

Details Theory of Optical Orientation in n-Type Semiconductors Theory of Optical Orientation in n-Type Semiconductors

2003-09-05

arxiv.org/abs/cond-mat/0309155v3

Physics

Condensed Matter

Materials Science

4 pages, 2 figures; revised version has a more complete discussion of the Elliott-Yafet and spin-phonon decay mechanisms

Scientific paper

10.1103/PhysRevB.70.113201

Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday rotation and time-resolved Kerr rotation the evolution of the magnetization can be followed as a function of temperature, applied field, doping level and excitation level. We present a theory for the spin relaxation in n-GaAs based on a set of rate equations for two interacting thermalized subsystems of spins: localized states on donor sites and itinerant states in the conduction band. The conduction band spins relax by scattering from defects or phonons through the D'yakonov-Perel' mechanism, while the localized spins relax by interacting with phonons (when in an applied field) or through the Dzyaloshinskii-Moriya interaction. In this model, numerous features of the data, including puzzling temperature and doping dependences of the relaxation time, find an explanation.

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