Graphene Segregated on Ni surfaces and Transferred to Insulators

Details Graphene Segregated on Ni surfaces and Transferred to Insulators Graphene Segregated on Ni surfaces and Transferred to Insulators

2008-04-10

arxiv.org/abs/0804.1778v2

Physics

Condensed Matter

Materials Science

7 pages, 4 figures

Scientific paper

10.1063/1.2982585

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.

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