Self-compensation in manganese-doped ferromagnetic semiconductors

Details Self-compensation in manganese-doped ferromagnetic semiconductors Self-compensation in manganese-doped ferromagnetic semiconductors

2002-09-13

arxiv.org/abs/cond-mat/0209329v1

Phys. Rev. Lett. 89, 227201 (2002)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, to appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.89.227201

We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn.

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