Origin of Drastic Change of Fermi Surface and Transport Anomalies in CeRhIn5 under Pressure

Details Origin of Drastic Change of Fermi Surface and Transport Anomalies in CeRhIn5 under Pressure Origin of Drastic Change of Fermi Surface and Transport Anomalies in CeRhIn5 under Pressure

2010-01-15

arxiv.org/abs/1001.2598v1

J. Phys. Soc. Jpn. 79 (2010) 033707

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 3 figures, submitted to Journal of Physical Society of Japan

Scientific paper

10.1143/JPSJ.79.033707

The mechanism of drastic change of Fermi surfaces as well as transport anomalies near P=Pc=2.35 GPa in CeRhIn5 is explained theoretically. The key mechanism is pointed out to be the interplay of magnetic order and Ce-valence fluctuations. We show that the antiferromagnetic state with "small" Fermi surfaces changes to the paramagnetic state with "large" Fermi surfaces with huge enhancement of effective mass of electrons with keeping finite c-f hybridization. This explains the drastic change of the de Haas-van Alphen signals. Furthermore, it is also consistent with the emergence of T-linear resistivity simultaneous with the residual resistivity peak at P=Pc in CeRhIn5.

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