Physics – Condensed Matter – Materials Science
Scientific paper
2009-07-23
Physics
Condensed Matter
Materials Science
4 pages, 3 figures
Scientific paper
The existence of the spin-orbit fields induced by the interface structure in Fe/GaAs junctions is proven from first-principles calculations. While the underlying symmetry of the fields follows that of the interface, the specific realization of the symmetry depends on the electron momentum and energy. The calculated atomic-layer-resolved expectation values of the Bloch states' spins show that the spin-orbit fields peak at the GaAs side of the interface. The employed technique is applicable to ferromagnetic junctions in general.
Ambrosch-Draxl Claudia
Fabian Jaroslav
Gmitra Martin
Matos-Abiague Alex
No associations
LandOfFree
Spin-orbit fields in ferromagnetic metal/semiconductor junctions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Spin-orbit fields in ferromagnetic metal/semiconductor junctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-orbit fields in ferromagnetic metal/semiconductor junctions will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-355904