Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2008-02-29
Phys. Rev. B 77, 235319 (2008)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages, 3 figures
Scientific paper
10.1103/PhysRevB.77.235319
Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges.
Abstreiter Gerhard
Bichler Martin
Grayson Matt
Schuh Dieter
Steinke Lucia
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