Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Details Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

2008-02-29

arxiv.org/abs/0802.4383v1

Nanotechnology 19, 16 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/0957-4484/19/16/165201

Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon-interaction.

Affiliated with

Also associated with

No associations

Rating

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-353022