High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

Details High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

2010-01-30

arxiv.org/abs/1002.0086v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 6 figures

Scientific paper

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.

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