Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

Details Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

2004-09-08

arxiv.org/abs/cond-mat/0409209v1

Phys. Rev. Lett. 94, 127202 (2005).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.94.127202

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a ferromagnet and is not specific to a particular tunnel device design. The lateral geometry allows us to link directly normal anisotropic magnetoresistance (AMR) and TAMR. This indicates that TAMR may be observable in other materials showing a comparable AMR at room temperature, such as transition metal alloys.

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