Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

Details Dephasing times in quantum dots due to elastic LO phonon-carrier collisions Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

2000-06-26

arxiv.org/abs/cond-mat/0006394v1

Physics

Condensed Matter

4 pages, 1 figure, accepted for Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.85.1516

Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and develop a theory for an intrinsic mechanism for dephasing in QD's: second-order elastic interaction between quantum dot charge carriers and LO-phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing.

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