Magnetism in (III, Mn)-V Diluted Magnetic Semiconductors: Effective Heisenberg Model

Details Magnetism in (III, Mn)-V Diluted Magnetic Semiconductors: Effective Heisenberg Model Magnetism in (III, Mn)-V Diluted Magnetic Semiconductors: Effective Heisenberg Model

2005-01-07

arxiv.org/abs/cond-mat/0501143v1

Phys. Rev. B 71, 113204 (2005)

Physics

Condensed Matter

Materials Science

5 pages, 7 figures, sbumitted to PRB

Scientific paper

10.1103/PhysRevB.71.113204

The magnetic properties of the diluted magnetic semiconductors (DMS) (Ga, Mn)As and (Ga, Mn)N are investigated by means of an effective Heisenberg model, whose exchange parameters are obtained from first-principle calculations. The finite-temperature properties of the model are studied numerically using a method based upon the Tyablikov approximation. The method properly incorporates the effects of positional disorder present in DMS. The resulting Curie temperatures for (Ga, Mn)As are in excellent agreement with experimental data. Due to percolation effects and noncollinear magnetic structures at higher Mn concentrations, our calculations predict for (Ga, Mn)N very low Curie temperatures compared to mean-field estimates.

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