Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium

Details Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium

2000-09-28

arxiv.org/abs/cond-mat/0009444v1

Phys. Rev. B 63, 033308 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 papes, 3 eps figures. Submit to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.63.033308

We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni kov-de Haas oscillations in the magnetoconductance reveal the two-dimensional (2D) character of the electrons accumulated at the InAs interfaces and yield their num ber in each of them. The temperature dependence of the oscillations suggests the f ormation of a field-induced energy gap at the Fermi level, similar to that observe d before in simpler 2D-2D tunneling systems. A calculation of the magnetoconductan ce that considers different 2D densities in the two InAs electrodes agrees with th e main observations, but fails to explain features that might be related to the pr esence of 2D holes in the GaSb region.

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