Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Details Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

2008-02-19

arxiv.org/abs/0802.2635v1

Physics

Condensed Matter

Materials Science

14 pages, 11 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.77.205210

The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually varied from compressive to tensile using (In,Ga)As templates with different In concentrations. Analytical expressions for the resistivities are derived from a series expansion of the resistivity tensor with respect to the direction cosines of the magnetization. In order to quantitatively model the experimental data, terms up to the fourth order have to be included. The expressions derived are generally valid for any single-crystalline cubic and tetragonal ferromagnet and apply to arbitrary surface orientations and current directions. The model phenomenologically incorporates the longitudinal and transverse anisotropic magnetoresistance as well as the anomalous Hall effect. The resistivity parameters obtained from a comparison between experiment and theory are found to systematically vary with the strain in the layer.

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