Screening in gated bilayer graphene

Details Screening in gated bilayer graphene Screening in gated bilayer graphene

2009-05-12

arxiv.org/abs/0905.1765v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages,4 figures

Scientific paper

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.

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