The longitudinal spin relaxation of 2D electrons in Si/SiGe quantum wells in a magnetic field

Details The longitudinal spin relaxation of 2D electrons in Si/SiGe quantum wells in a magnetic field The longitudinal spin relaxation of 2D electrons in Si/SiGe quantum wells in a magnetic field

2001-12-27

arxiv.org/abs/cond-mat/0112466v1

Physics

Condensed Matter

Soft Condensed Matter

4 pages, 2 figures

Scientific paper

The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering centers and of the momentum scattering time lead to the conclusion that for high electron mobility the spin relaxation is ruled by the Dyakonov-Perel (DP) mechanism while for low mobility the Elliott-Yaffet mechanism dominates. The DP relaxation is caused by Bychkov-Rashba coupling. Evaluation of the DP mechanism shows that 1/T1 for high electron mobility can be effectively reduced by an external magnetic field. The effect of the degenerate Fermi-Dirac statistics on the DP process is discussed.

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