Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets

Details Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets

2001-11-04

arxiv.org/abs/cond-mat/0111056v2

Phys. Rev. B 65, 235319 (2002).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 5 figures. Minor changes, one reference added

Scientific paper

10.1103/PhysRevB.65.235319

We consider bilayer quantum Hall systems at total filling factor $\nu=1$ in presence of a bias voltage $\Delta_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $\nu=1$ phase-coherent state {\it with charge imbalance}. We present simple analytical expressions for bias-dependent renormalized charge imbalance and pseudospin stiffness which are sensitive to the softening of collective modes.

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