Regimes of Precursor-Mediated Epitaxial Growth

Details Regimes of Precursor-Mediated Epitaxial Growth Regimes of Precursor-Mediated Epitaxial Growth

2007-12-08

arxiv.org/abs/0712.1289v1

Physics

Condensed Matter

Materials Science

10 pages, 2 figures

Scientific paper

A discussion of epitaxial growth is presented for those situations (OMVPE, CBE, ALE, MOMBE, GSMBE, etc.) when the kinetics of surface processes associated with molecular precursors may be rate limiting. Emphasis is placed on the identification of various {\it characteristic length scales} associated with the surface processes. Study of the relative magnitudes of these lengths permits one to identify regimes of qualitatively different growth kinetics as a function of temperature and deposition flux. The approach is illustrated with a simple model which takes account of deposition, diffusion, desorption, dissociation, and step incorporation of a single precursor species, as well as the usual processes of atomic diffusion and step incorporation. Experimental implications are discussed in some detail.

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