Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Details Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

2005-10-05

arxiv.org/abs/cond-mat/0510122v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 4 figures

Scientific paper

10.1063/1.2146065

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.

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