Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

Details Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$) Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

2011-03-04

arxiv.org/abs/1103.0839v1

Appl. Phys. Lett. 98, 023113 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.3543847

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $\pi$-bands partially preserved. Typical free-standing characteristics are fully recovered with a second graphene layer. We moreover discuss on the magnetic properties of the interface and the absence of Fermi-level pinning effects that could allow for a plausible device operation starting from the off-state.

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