Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure

Details Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure

2011-03-04

arxiv.org/abs/1103.0811v3

J. Phys. Soc. Jpn. 80 (2011) 084718

Physics

Condensed Matter

Strongly Correlated Electrons

8 pages, 9 figures

Scientific paper

10.1143/JPSJ.80.084718

Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.

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