Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

Details Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

2011-04-04

arxiv.org/abs/1104.0520v2

Physics

Condensed Matter

Materials Science

ICMOVPE 2010 Proceeding

Scientific paper

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

Affiliated with

Also associated with

No associations

Rating

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-317691