Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Details Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

2002-08-19

arxiv.org/abs/cond-mat/0208355v1

Physics

Condensed Matter

3 pages, 4 figures

Scientific paper

10.1063/1.1516859

The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial silicon overgrowth. We observe minimal dopant segregation (5 nm), complete electrical activation at a silicon growth temperature of 250 degrees C and a high two-dimensional electron mobility of 100 cm2/Vs at a temperature of 4.2 K. These results, along with preliminary studies aimed at further minimizing dopant diffusion, bode well for the fabrication of atomically precise dopant arrays in silicon such as those found in recent solid-state quantum computer architectures.

Affiliated with

Also associated with

No associations

Rating

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-315934