Impurities in a Biased Graphene Bilayer

Details Impurities in a Biased Graphene Bilayer Impurities in a Biased Graphene Bilayer

2006-12-18

arxiv.org/abs/cond-mat/0612470v2

Phys. Rev. Lett. 98, 126801 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation we calculate the electronic density of states and its dependence on the applied bias voltage.

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