Tunneling in double barrier junctions with 'hot spots'

Details Tunneling in double barrier junctions with 'hot spots' Tunneling in double barrier junctions with 'hot spots'

2012-04-26

arxiv.org/abs/1204.5851v1

Physical Review Letters 105, 047207 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.105.047207

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

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