Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors

Details Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors

2005-05-10

arxiv.org/abs/cond-mat/0505229v1

Physics

Condensed Matter

Materials Science

12 pages, 7 figures

Scientific paper

10.1143/JJAP.45.2881

The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage characteristics of system. For SETs implemented by quantum dots (QDs) embedded into a thin $SiO_2$ layer, the interdot Coulomb repulsion is more important than the interdot electron hopping as a result of high potential barrier height between QDs and $SiO_2$. We found that the interdot Coulomb repulsion not onlyleads to new resonant levels, but also creates negative differential conductances.

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