Spin-dependent tunneling in metal-insulator-narrow gap semiconductor structures in a magnetic field

Details Spin-dependent tunneling in metal-insulator-narrow gap semiconductor structures in a magnetic field Spin-dependent tunneling in metal-insulator-narrow gap semiconductor structures in a magnetic field

1996-11-20

arxiv.org/abs/cond-mat/9611149v1

Physics

Condensed Matter

15 pages (RevTex), 11 PostScript figures

Scientific paper

10.1088/0268-1242/12/7/017

We present results of tunneling studies of p-Hg_{1-x}Cd_{x}Te-oxide-Al structures with 0.165

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