Interface-Induced Electron Spin Splitting in SiGe Heterostructures

Details Interface-Induced Electron Spin Splitting in SiGe Heterostructures Interface-Induced Electron Spin Splitting in SiGe Heterostructures

2003-02-14

arxiv.org/abs/cond-mat/0302308v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 1 figure

Scientific paper

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.

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