Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices

Details Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices

2006-01-04

arxiv.org/abs/cond-mat/0601069v1

Phys. Rev. B 73, 033409 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.73.033409

Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin relaxation time in the islands. It is shown that the interplay of spin accumulation on the islands and charging effects leads to periodic modification of the differential conductance and tunnel magnetoresistance. For a sufficiently long spin relaxation time, the modulations are associated with periodic oscillations of the sign of both the tunnel magnetoresistance and differential conductance.

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