The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Details The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

2011-09-07

arxiv.org/abs/1109.1486v1

Physics

Condensed Matter

Materials Science

Scientific paper

Atomic force microscopy and second-harmonic generation data show that boron
doping enhances the rate of oxidation of H-terminated silicon. Holes cause a
greater increase in the reactivity of the Si-H up bonds than that of the Si-Si
back bonds.

Affiliated with

Also associated with

No associations

Rating

The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-306535