Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin films

Details Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin films Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin films

2000-10-05

arxiv.org/abs/cond-mat/0010098v2

Physics

Condensed Matter

Statistical Mechanics

5 pages, REVTeX 3.1 with one eps-figure

Scientific paper

10.1103/PhysRevLett.86.3642

We present the first analytical study of phase transitions in ferroelastic-ferroelectric epitaxial thin films on exactly solvable model. The emerging domain structure with domains of equal width (which may be exponentially large on a "soft" substrate) always remains stable irrespective of the film thickness. The dielectric response of an epitaxial film is {\em smaller} than that of a free film, in striking contrast with assertions in the literature.

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